An optoelectronic heterostructure for neuromorphic computing: CdS/V<sub>3</sub>O<sub>5</sub>
نویسندگان
چکیده
Nonvolatile resistive switching is one of the key phenomena for emerging applications in optoelectronics and neuromorphic computing. In most cases, an electric field applied to a two terminal dielectric material device leads formation low resistance filament due ion migration. However, stochastic nature migration can be impediment robustness controllability, with uncontrolled variations high states or threshold voltages. Here, we report optically induced based on CdS/V3O5 heterostructure which overcome this issue. V3O5 known have second order insulator metal transition around Tc ≈ 415 K, electrically at room temperature. Upon illumination, direct transfer photoinduced carriers from CdS into produces nonvolatile The initial recovered by reaching temperature metallic phase, i.e., temperatures above Tc. Interestingly, becomes volatile By locally manipulating using light, system promising platform hardware computing implementations.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0103650